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Small Signal General Purpose Transistors (NPN) 2N4400/2N4401
Small Signal General Purpose Transistors (NPN)
Features
* NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications
Mechanical Data
Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram
TO-92
Maximum Ratings (T Ambient=25C unless noted otherwise)
Symbol Marking Code Description 2N4400 2N4400 40 60 6.0 600 625 5.0 1.5 12 200 83.3 -55 to +150 2N4401 2N4401 V V V mA mW mW/ C W mW/ C C/W C/W C Unit Conditions
VCEO VCBO VEBO IC PD PD RJA RJC TJ ,TSTG
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at TA=25C Derate above 25C Power Dissipation at TC=25C Derate above 25C Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Case Operation and Storage Junction Temperature Range
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415
Rev. A/AH 2008-03-05 Page 1 of 4
Small Signal General Purpose Transistors (NPN) 2N4400/2N4401
Electrical Characteristics (T Ambient=25C unless noted otherwise)
2N4400 Symbol Description Min. Max. 0.40 0.75 0.95 1.20 100 100 150 7.5 8.0 6.5 30 250 30 15 20 225 30 Min. 60 40 6.0 0.75 20 40 80 100 40 1.0 0.1 250 40 1.0 Max. 0.40 0.75 0.95 1.20 100 100 300 15 8.0 6.5 30 500 30 15 20 225 30 S nS nS nS nS k x10
4
2N4401 Unit Conditions IC=100A, IE=0 IC=1mA, IB=0 IE=100A, IC=0 IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VEB=0.4V, VCE=35V VEB=0.4V, VCE=35V VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=20mA, f=100MHz VCB=5V, IE=0 f=100KHz, VEB=0.5V, IC=0 f=100KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCC=30V, VEB=2V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=IB2=15mA
V(BR)CBO V(BR)CEO* V(BR)EBO VCE(sat) * VBE(sat) * ICEV IBEV
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Emitter Saturation Voltage
60 40 6.0 0.75 20
V V V V
Base Emitter Saturation Voltage Collector Cut-Off Current Base Cut-Off Current
V nA nA
hFE*
D.C. Current Gain
40 50 20
hie hre fT CCBO CEBO hfe hoe td tr ts tf
*Pulse
Input Impedance Voltage Feedback Ratio Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Small Signal Current Gain Output Admittance Delay Time Rise Time Storage Time Fall Time
0.5 0.1 200 20 1.0 -
MHz pF pF
Test: Pulse Width<300s, Duty Cycle<2%
Rev. A/AH 2008-03-05 www.taitroncomponents.com Page 2 of 4
Small Signal General Purpose Transistors (NPN) 2N4400/2N4401
Marking Information:
2N4400 2N4401
Dimensions in mm
TO-92
Rev. A/AH 2008-03-05 www.taitroncomponents.com Page 3 of 4
Small Signal General Purpose Transistors (NPN) 2N4400/2N4401
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 247-2232 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTACOES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAUDE - SAO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN' AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2008-03-05 www.taitroncomponents.com Page 4 of 4

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